Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
نویسندگان
چکیده
منابع مشابه
Field-effect tunneling transistor based on vertical graphene heterostructures.
An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphen...
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ژورنال
عنوان ژورنال: Science
سال: 2012
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.1218461